Dynamics of the infinitely-thin kink

We consider the dynamics of the domain-wall kink soliton, in particular we study the zero mode of translation. In the infinitely-thin kink limit, we show that the zero mode is almost completely frozen out, the only remnant being a dynamically constrained four-dimensional mode of a single but arbitrary frequency. In relation to this result, we show that the usual mode expansion for dealing with zero modes - implicit collective coordinates - is not in fact a completely general expansion, and that one must use instead a traditional generalised Fourier analysis.     

Compression testing of continuous fiber reinforced polymer composites with out-of-plane fiber waviness and circular notches

We investigated the face-stabilized Open-Hole Compression (OHC) test method for evaluating the effects of fiber waviness on the compression strength of continuous carbon fiber reinforced polymer composites. Temporal evaluations of the load-deformation response, acoustic emissions and optical microscopy are used to understand the failure modes and damage progression in the OHC specimen. The failure modes observed are structurally correlated to matrix failure and kink zone formation leading to fiber fracture. The results show how the resin pocket plays a more critical role than the layup in influencing the initiation of damage in the composite specimens.     

Interface structure and misfit relaxation in YBa2Cu3O7‐δ/PrBa2Cu3O7‐δ heterostructures on SrTiO3(001) substrates

Structural properties of YBa₂Cu₃O_7‐δ/PrBa₂Cu₃O_7‐δ heterointerfaces have been investigated by aberration‐corrected electron microscopy. Experimental evidence shows that c‐axis‐oriented YBa₂Cu₃O_7‐δ/PrBa₂Cu₃O_7‐δ heterostructures with atomically sharp interface epitaxially grow on SrTiO₃(001) substrates. In terms of the contrast analysis, no apparent interdiffusion between YBa₂Cu₃O_7‐δ and PrBa₂Cu₃O_7‐δ occurs at the interface. In addition, stand‐off misfit dislocations and planar faults appear within PrBa₂Cu₃O_7‐δ layer near the interface. Both misfit dislocations and interfacial dislocations resulting from the termination of planar faults contribute to misfit relaxation at the YBa₂Cu₃O_7‐δ/PrBa₂Cu₃O_7‐δ interface. The defect configuration of planar faults and stand‐off misfit dislocations is explored. Copyright © 2013 John Wiley & Sons, Ltd.     

液态丙烯腈低聚物修复聚丙烯腈基碳纤维微孔缺陷

提出一种全新的缺陷修复的方法,即将聚丙烯腈基(PAN)碳纤维T300在液态丙烯腈低聚物(LAN)中浸渍后,再进行预氧化和碳化热处理,可以将T300的拉伸强度提高25%.应用二维小角X射线散射(SAXS)法可以计算出LAN修复缺陷前后T300微孔缺陷的长度(L)、横截面尺寸(lp)、取向角(Beq)、相对体积(Vrel)的变化,结果表明碳纤维的拉伸性能越好,微孔的长度、取向角、相对体积含量越小.T300拉伸性能的提高是由于缺陷修复的结果.应用BET比表面积法、扫描电子显微镜(SEM)表征LAN修复缺陷前后T300的比表面积以及表面形貌的变化,结果表明,T300在LAN中浸渍并经过预氧化和碳化热处理,比表面积变小,表面缺陷明显减少.进一步验证LAN对碳纤维中的微孔缺陷具有修复作用.应用X射线光电子能谱(XPS)法表征LAN修复前后T300表面化学成分的变化,结果表明,LAN修复后含氧官能团(C―OH,C=O,HO―C=O)显著增加,有利于增强碳纤维与树脂基体之间的相互作用,从而提高碳纤维的力学性能.     

Influence of Ga/(Ga + In) grading on deep‐defect states of Cu(In,Ga)Se2 solar cells

The benefits of gallium (Ga) grading on Cu(In,Ga)Se₂ (CIGS) solar cell performance are demonstrated by comparing with ungraded CIGS cells. Using drive‐level capacitance profiling (DLCP) and admittance spectroscopy (AS) analyses, we show the influence of Ga grading on the spatial variation of deep defects, free‐carrier densities in the CIGS absorber, and their impact on the cell's open‐circuit voltage V_oc. The parameter most constraining the cell's V_oc is found to be the deep‐defect density close to the space charge region (SCR). In ungraded devices, high deep‐defect concentrations (4.2 × 10¹⁶cm^–3) were observed near the SCR, offering a source for Shockley–Read–Hall recombination, reducing the cell's V_oc. In graded devices, the deep‐defect densities near the SCR decreased by one order of magnitude (2.5 × 10¹⁵ cm^–3) for back surface graded devices, and almost two orders of magnitude (8.6 × 10¹⁴ cm^–3) for double surface graded devices, enhancing the cell's V_oc. In compositionally graded devices, the free‐carrier density in the absorber's bulk decreased in tandem with the ratio of gallium to gallium plus indium ratio GGI = Ga/(Ga + In), increasing the activation energy, hindering the ionization of the defect states at room temperature and enhancing their role as recombination centers within the energy band. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Accelerated formation of the boron–oxygen complex in p‐type Czochralski silicon

This Letter reports on the acceleration of the rate of formation of the boron–oxygen defect in p‐type Czochralski silicon with illumination intensities in excess of 2.1 × 10¹⁷ photons/cm²/s. It is observed that increased light intensities greatly enhance the rate of defect formation, without increasing the saturation concentration of the defect. These results suggest a dependence of the defect formation rate upon the total majority carrier concentration. Finally, a method using temperatures up to 475 K and an illumination intensity of 1.68 × 10¹⁹ photons/cm²/s is shown to result in near‐complete defect formation within seconds. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

剪切形变下掺杂及缺陷对MoS2电子结构的影响

本文利用密度泛函理论,研究剪切形变下掺杂改性及不同类型缺陷对MoS2电子结构的影响。发现：剪切形变下,MoS2+P体系为相对最稳定的结构,掺杂改性相较于缺陷对模型稳定性影响更小;模型MoS2+P+Se中P-Mo键易形成共价键,而其中的Se-Mo键和MoS2+P-Mo-S模型中的P-Mo键,易形成离子键;掺杂使MoS2模型能隙变大,而缺陷使能隙减小,且S和Mo原子共缺陷的模型带隙为0;缺陷相较于掺杂改性模型,更能使Mo原子周围增加电荷聚集度,带隙值更低,更能影响或调控模型的电子结构。     

相变及空位缺陷对高压下GeO_2光学性质的影响

本文采用第一性原理方法,在100 GPa的压力范围内,计算了GeO_2理想晶体和含锗、氧空位点缺陷晶体的光学性质.吸收谱数据表明,压力诱导的三个结构相变对GeO_2晶体的吸收谱均有影响:第一个相变将导致其吸收边蓝移,而第二和第三相变将使得其吸收边红移.锗和氧空位点缺陷的存在将导致GeO_2的吸收边红移,但氧空位点缺陷引起的红移更明显.尽管如此,分析发现,在100 GPa的压力范围内,压力、相变以及空位点缺陷等因素都不会导致GeO_2晶体在可见光区出现光吸收现象(是透明的).波长在532 nm处的折射率数据显示,在GeO_2的四个相区,其折射率均随压力增加而降低;而且,GeO_2的三个结构相变以及锗、氧空位点缺陷都会导致其折射率有所增大.本文预测,GeO_2有成为冲击光学窗口材料的可能.     

A small-angle X-ray scattering study of nanoparticle assembly in an aligned nematic liquid crystal

The assembly of colloidal particles in a nematic liquid crystal has been investigated using small-angle X-ray scattering. The structure and orientation of nanoparticle assemblies in bulk samples of aligned nematic liquid crystal have been determined. The method offers some advantages over optical microscopy, which is usually restricted to investigations of thin cells and micron-sized particles. The scattering from chains of particles has been calculated, and comparison with experimental results has shown that suspensions of 48 and 105 nm diameter silica nanoparticles formed highly ordered structures perpendicular to the liquid crystal director, consistent with quadrupolar defect-induced assembly.